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Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

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2016-08-01

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Abstract

In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.

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compensation, modelling and simulation, silicon, solar cell, upgraded metallurgical grade

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https://dspace-test.anu.edu.au/handle/1885/733759615

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DevOps Pure Testing

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Energy Procedia

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Conference paper

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10.1016/j.egypro.2016.07.124

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