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Ion microbeam applications in semiconductors

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Date

1988-03-02

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Abstract

Microbeam techniques and applications to semiconductor analysis are briefly reviewed. Special microbeam requirements and limitations for channeling analysis using MeV He microbeams are discussed, including conditions to minimise beam damage to Si and GaAs. Finally, channeling contrast microscopy is described, together with the application of this technique to the analysis of phase transformations and impurity redistribution in locally laser annealed Si.

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Citation

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https://dspace-test.anu.edu.au/handle/1885/733734781

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DevOps Pure Testing

Source

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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Article

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DOI

10.1016/0168-583X(88)90045-6

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