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Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

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Date

2013

Authors

Ullah, A. R.
Joyce, Hannah J
Burke, Anthony
Wong-Leung, Yin-Yin (Jennifer)
Tan, Hoe Hark
Jagadish, Chennupati
Micolich, Adam Paul

Journal Title

Journal ISSN

Volume Title

Publisher

Wiley-VCH Verlag GMBH

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility ve

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/75231

Collections

Open Access Research

Source

Physica Status Solidi: Rapid Research Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1002/pssr.201308014

Restricted until

2037-12-31

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01_Ullah_Electronic_comparison_of_InAs_2013.pdf (336.81 KB)

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