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Comparison of interdiffusion between single and stacked-layer InGaAs/GaAs quantum dots

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Date

2003

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Abstract

In this work both thermal interdiffusion and impurity free vacancy disordering were studied and compared between two different QDs structures. One consisted of a single layer QDs, and the other of three-stacked-layer QDs. Different interdiffusion behaviors were observed in these QD structures and were discussed as the effects of strain accumulation and the presence of grown-in defects in QD system.

Description

Keywords

Atomic layer deposition, Capacitive sensors, Dielectric films, Gallium arsenide, Impurities, Indium gallium arsenide, Monolithic integrated circuits, Optical films, Quantum dots, US Department of Transportation

Citation

URI

https://dspace-test.anu.edu.au/handle/1885/733736479

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DevOps Pure Testing

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Type

Conference contribution

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DOI

10.1109/NANO.2003.1231048

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