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Ultrafast carrier capture into InGaAs/GaAs quantum wells

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Date

1998

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Abstract

We have inverstigated the dynamics of photoexcited carriers in InGaAs/GaAs quantum wells using the photoluminescence up-conversion technique. In this study we describe the observation of an extremely fast (600fs) capture process in shallow InGaAs/GaAs quantum wells, resulting from resonant tunnelling from impurities in the GaAs barrier.

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https://dspace-test.anu.edu.au/handle/1885/733730464

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DevOps Pure Testing

Source

Springer Series in Chemical Physics

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Article

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DOI

10.1007/978-3-642-72289-9_90

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