Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
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Mortemousque, P. A.
Sekiguchi, T.
Culan, C.
Vlasenko, M. P.
Elliman, R. G.
Vlasenko, L. S.
Itoh, K. M.
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American Institute of Physics
Abstract
Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has
been observed by monitoring the change in photoconductivity induced by spin
dependent recombination. The spectra at various resonance frequencies show
signal intensity distributions drastically different from that observed in
conventional electron paramagnetic resonance, attributed to different
recombination rates for the forty possible combinations of spin states of a
pair of a Bi donor and a paramagnetic recombination center. An excellent
tunability of Bi excitation energy for the future coupling with superconducting
flux qubits at low fields has been demonstrated.
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Applied Physics Letters
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