Comparative Studies using EXAFS and PAC of Lattice Damage in Semiconductors

Byrne, Aidan; Ridgway, Mark C; Glover, Christopher; Bezakova, E

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Comparative Studies using EXAFS and PAC of Lattice Damage in Semiconductors

Date

2004

Authors

Byrne, Aidan

Ridgway, Mark C

Glover, Christopher

Bezakova, E

Publisher

Kluwer Academic Publishers

Abstract

We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.