Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Loading...
Date
Authors
Liu, Qiu Xiang
Lu, W
Li, Zhong Hui
Chen, Yong J
Shen, S
Fu, Y
Willander, M
Tan, Hoe Hark
Yuan, Shu
Jagadish, Chennupati
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.
Description
Keywords
Citation
Collections
Source
Applied Physics Letters
Type
Book Title
Entity type
Access Statement
License Rights
DOI
Restricted until
2037-12-31
Downloads
File
Description