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Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

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Date

2010

Authors

Du, Si
Fu, Lan
Tan, Hoe Hark
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/83993

Collections

Open Access Research

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2010.5699772

Restricted until

2037-12-31

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Description
01_Du_Study_of_intermixing_mechanism_2010.pdf (370.69 KB)

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