RAPID ANNEALING OF GaAs AND RELATED COMPOUNDS.

Williams, J. S.; Pearton, S. J.

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

RAPID ANNEALING OF GaAs AND RELATED COMPOUNDS.

Date

1985

Authors

Williams, J. S.

Pearton, S. J.

Abstract

In recent years, rapid annealing of GaAs has been employed to activate ion implanted dopants and produce metal-semiconductor contacts. More recently, rapid heating techniques have been used to anneal heterostructures without degrading requisite high mobilities of SDHT devices. This paper reviews the various annealing regimes which are useful for heat treating GaAs and related compounds. Examples illustrate unique and potentially useful features of rapid annealing.

URI

https://dspace-test.anu.edu.au/handle/1885/733729178

Collections

DevOps Pure Testing

Type

Conference contribution

Full item page

Cultural advice

RAPID ANNEALING OF GaAs AND RELATED COMPOUNDS.

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Citation

URI

Collections

Source

Type

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until