Quantum-dot growth simulation on periodic stress of substrate
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Zhao, Chang
Chen, Y. H.
Cui, C. X.
Xu, B.
Sun, J.
Lei, W.
Lu, L. K.
Wang, Z. G.
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American Institute of Physics (AIP)
Abstract
InAsquantum dots(QDs) are grown on the cleaved edge of an InₓGa₁ˍₓAs∕GaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an InₓGa₁ˍₓAs layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic Monte Carlo method. Our results show that a good alignment of QDs can be achieved when the strain energy reaches 2% of the atomic binding energy. The simulation results are in excellent qualitative agreement with our experiments.
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The Journal of Chemical Physics
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