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EXAFS Comparison of Crystalline/Continuous and Amorphous/Porous GaSb

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Date

2005

Authors

Kluth, Susan
Johannessen, Bernt
Kluth, Patrick
Glover, Christopher
Foran, Garry J
Ridgway, Mark C

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.

Description

Keywords

Keywords: Amorphization; Amorphous materials; Antimony alloys; Crystalline materials; Ion implantation; Polycrystalline materials; Porous materials; Semiconductor materials; EXAFS; GaSb; Homopolar bonding; Porous semiconductors; Gallium alloys Amorphisation; EXAFS; GaSb; Ion implantation; Porous semiconductors

Citation

URI

http://hdl.handle.net/1885/83130

Collections

Open Access Research

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.nimb.2005.06.060

Restricted until

2037-12-31

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01_Kluth_EXAFS_Comparison_of_2005.pdf (141.56 KB)

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