Electro-optic properties of 850 nm high-brightness tapered lasers

Abstract

High-brightness tapered laser diode at 850 nm was fabricated based on the AlGaInAs/A1GaAs chip with graded-index waveguide separate confinement hetero-structure. The tapered laser has better performance than the broad laser under the same condition. The lateral divergence angles of the tapered laser and the broad laser were 4° and 6° at the output power of 1 W, while the beam propagation factor M2 were 2.8 and 9.2, respectively. The slope efficiency of the tapered laser had a high value of 0.58 W/A and the conversion efficiency reached 30% in the output power 1.40 W under the injection current of 3 A. The facts indicated the tape-red laser would be an ideal choice for high brightness high power laser diodes. Show more