Asymmetry in I-V characteristic and responsivity of GaAs/AlGaAs quantum well infrared photodetector
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Abstract
The asymmetry between positive and negative current is commonly observed from measuring current-voltage (I-V) charateristics of quantum well infrared photodetectors (QWIP). Responsivity is also asymmetrical under forward and reverse bias voltages. These properties contribute to I-V current asymmetry of QWIPs by comparing samples grown by molecular beam epitaxy (MBE) and metallorganic chemical vapor deposition (MOCVD).