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Ultralow threshold lasing in InGaAs/InGaAsP MQW microdisk laser

Abstract

InGaAs/InGaAsP MQW microdisk lasers with the diameter of 2μm were fabricated by using reactive ion etching and wet chemical etching. An ultralow lasing with a threshold of only about a few microwatts was achieved when the microdisk laser was continuously pumped at liquid nitrogen temperature by Ar ion laser. The phenomena of multiple mode lasing, mode chirping and output saturation were investigated. A possible explanation is that the optical mode distribution and the competition between different modes are influenced by pump power.

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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