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Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation

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Date

1996

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Abstract

-The electrical properties of surface- and buriedchannel p-MOSFET's containing strained GeSi heterostructures synthesized by high-dose Ge implantation and solid phase epitaxial growth have been investigated. Compared with Si control devices on the same chips, GeSi transistors exhibited improved performance: the channel hole mobility and linear transconductance was up to 18% higher for surface-channel GeSi transistors, and up to 12% higher for buried-channel GeSi p-MOSFET's, than for equivalent Si devices. Ion-beam synthesis of GeSi strained layers therefore offers an attractive means for realising improved device performance in conventional Si device structures.

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https://dspace-test.anu.edu.au/handle/1885/733742153

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DevOps Pure Testing

Source

IEEE Transactions on Electron Devices

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Article

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DOI

10.1109/16.477598

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