Investigation of silicon transport in the neutral background of a plasma activated reactive evaporation system

Abstract

The transport of silicon vapor from an electron-beam evaporation source through argon and hydrogen gas in pressures near 1.0 mTorr has been studied. The flux-distance relationships for the effusion/diffusion of the evaporant through the device are found to vary with the type of filling gas. The investigation includes both a simple theoretical model and experiment. The results of each study are in good agreement. Cross sections for the energy-averaged momentum transfer collisions of silicon with the filling gases (argon, hydrogen) at thermal energies have been determined. Show more