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Ion-implanted InP for ultrafast photodetector applications

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2000

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Abstract

In order to create highly resistive InP with short carrier lifetimes, p-type epilayers at 200°C were implanted with MeV p+ ions up to doses of 1 × 101 cm-2. Samples were subsequently annealed at temperatures between 400°C and 700°C for 30s. Double crystal x-ray diffraction, time resolved photoluminescence and Hall effect measurements were performed on these samples. The results of these experiments were then compared with the ones obtained from implantation into semi-insulating InP with a view to create materials suitable for ultrafast photodetector fabrication.

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https://dspace-test.anu.edu.au/handle/1885/733737314

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DevOps Pure Testing

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Conference contribution

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DOI

10.1109/COMMAD.2000.1022914

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