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Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

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Date

1994

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Abstract

Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

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Citation

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https://dspace-test.anu.edu.au/handle/1885/733733690

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DevOps Pure Testing

Source

Physical Review Letters

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Article

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DOI

10.1103/PhysRevLett.73.858

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