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ICP etching process development based on Cl2/H2 chemistry and adapted to non-thermalized InP wafers for the realisation of high aspect ratio and vertical sidfewall deep ridge waveguides and buried heterostructures

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2006

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ICP etching using Cl2/H2 chemistry is studied to realize deep ridges with smooth and vertical sidewall. The influence of Cl 2/H2 ratio on the etching mechanism is investigated for both InP bulk layers and InGa(Al)As/InP heterostructures. The process is optimised for non-thermalized InP wafers to avoid the use of thermal grease.

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https://dspace-test.anu.edu.au/handle/1885/733724726

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DevOps Pure Testing

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Conference contribution

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