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Measurement of the damage profile of ion-implanted GaAs using an optical method

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Date

2000

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Abstract

We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95).

Description

Keywords

Chemicals, Energy measurement, Etching, Gallium arsenide, Optical computing, Optical control, Optical modulation, Optical sensors, Particle beam optics, Reflectivity

Citation

URI

https://dspace-test.anu.edu.au/handle/1885/733742399

Collections

DevOps Pure Testing

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Type

Conference contribution

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DOI

10.1109/SIM.2000.939216

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