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Origin of Luminescence from Si - Implanted (1102) Al 2 O 3

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Date

2004

Authors

Park, C J
Kwon, Y
Lee, Y H
Kang, T W
Cho, H Y
Kim, Sungeun
Choi, Suk Ho
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The structural and luminescence properties of nc-Si in (11̄02) sapphires were analyzed using cathodoluminescence (CL), photoluminescence (PL), and transmission electron microscopy (TEM). Si crystallite of about 4 to 5 nm diameter were created by implanta

Description

Keywords

Keywords: Alumina; Annealing; Band structure; Cathodoluminescence; Crystal defects; Crystal structure; Crystallization; Ion implantation; Laser beams; Negative ions; Photoluminescence; Photomultipliers; Sapphire; Semiconducting silicon; Transmission electron micros

Citation

URI

http://hdl.handle.net/1885/77969

Collections

Open Access Research

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1699471

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