Test environment running 7.6.6

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs

Thumbnail Image

Date

1988

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75-135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.

Description

Keywords

Citation

URI

https://dspace-test.anu.edu.au/handle/1885/733740845

Collections

DevOps Pure Testing

Source

Journal of Applied Physics

Type

Article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.342029

Restricted until

DSpace software copyright © 2002-2026 LYRASIS