InAs Nanostructure Arrays for Room-Temperature Ultra-Broadband Infrared Photodetection
Abstract
III-V semiconductor-based nanostructures such as nanowires have shown great promise for optoelectronic applications such as photodetectors, solar cells and light-emitting diodes. In this work, InAs nanostructure array-based photodetectors were demonstrated for room-temperature ultra-broadband infrared photodetection.