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SIMS and depth profiling of semiconductor structures

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Date

1994-03-02

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Abstract

This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of AlxGa1-xAs/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.

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Citation

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https://dspace-test.anu.edu.au/handle/1885/733738404

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DevOps Pure Testing

Source

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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Article

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DOI

10.1016/0168-583X(94)95845-9

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