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Structural Characterization of Amorphised InAs with Synchrotron Radiation

Date

Authors

de Azevedo, Gustavo

Ridgway, Mark C

Yu, Kin Man

Glover, C J

Foran, Garry J

Publisher

Elsevier

Abstract

Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our

Keywords

Keywords: Amorphous materials; Chemical bonds; Crystalline materials; Electromagnetic wave absorption; Ion implantation; Synchrotron radiation; X rays; Amorphous semiconductors; Semiconducting indium compounds Amorphous solids; EXAFS; InAs; Ion implantation

URI

http://hdl.handle.net/1885/91624

Collections

Open Access Research

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(02)00471-8

Restricted until

2037-12-31

Downloads

File

Description

01_de Azevedo_Structural_Characterization_of_2002.pdf (97.06 KB)