Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds
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Xu, H
Liu, C
Silberschmidt, V V
Pramana, Stevin S
White, Timothy
Chen, Z
Acoff, V L
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Pergamon Press
Abstract
Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 °C to 250 °C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates tow
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Acta Materialia
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2037-12-31
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