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Reduced threshold current in NbO2selector by engineering device structure

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Date

2014-10-01

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Abstract

The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show that the threshold current for the insulator-metal-transition in microscale devices (∼150 μm) can be reduced to ∼20 μA, close to that realized in nanoscale (∼10 nm) 3-D vertical ReRAM. This could be attributed to a thermal confinement effect caused by the presence of a permanent conductive filament in dielectric layer. The experimental results are supported by finite element simulation.

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Keywords

Cross-point memory, Niobium oxide, Non-volatile memory, Resistive switching, Threshold switching

Citation

URI

https://dspace-test.anu.edu.au/handle/1885/733752836

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DevOps Pure Testing

Source

IEEE Electron Device Letters

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Article

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DOI

10.1109/LED.2014.2344105

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