Dose dependence of residual lattice disorder in ion-implanted and annealed silicon

Christodoulides, C. E.; Grant, W. A.; Williams, J. S.

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Dose dependence of residual lattice disorder in ion-implanted and annealed silicon

Date

1977

Authors

Christodoulides, C. E.

Grant, W. A.

Williams, J. S.

Abstract

Significant nonlinear effects have been observed in the dose/disorder relationship for Pb-implanted Si both before and after annealing. The results suggest that accumulated stresses within the implanted Si layer may play a significant role in recrystallization.

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https://dspace-test.anu.edu.au/handle/1885/733723236

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DevOps Pure Testing

Source

Applied Physics Letters

Type

Article

DOI

10.1063/1.89408

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Dose dependence of residual lattice disorder in ion-implanted and annealed silicon

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