Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
Loading...
Date
Authors
Headley, Carl
Fu, Lan
Parkinson, Patrick Wallace
Xu, Xinlong L
Lloyd-Hughes, J
Jagadish, Chennupati
Johnston, Michael B
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
We have improved the stability and performance of terahertz (THz) photoconductive (Auston) switches using a combination of (NH4) 2S surface passivation (SP) and silicon nitride (Si3 N4) encapsulation. The influences of SP and encapsulation on the ultrafast electron dynamics in GaAs were examined using THz emission spectroscopy and optical pumpTHz probe spectroscopy. The power of THz radiation from the surface of photoexcited GaAs increased by a factor of 5 after passivation and encapsulation, while the process lengthened the trapping time for photoexcited charge carriers. By fabricating and assessing the performance of photoconductive switches, we found that passivation and encapsulation increased the average THz power generated fourfold.
Description
Keywords
Citation
Collections
Source
IEEE Journal on Selected Topics in Quantum Electronics
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description