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Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

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Date

2021

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Abstract

III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.

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Keywords

AlInAsSb, GaSb, III-Sb alloys, III-V multi-junction solar cells, Tandem cells

Citation

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https://dspace-test.anu.edu.au/handle/1885/733717939

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DevOps Pure Testing

Source

Solar Energy Materials and Solar Cells

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Article

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DOI

10.1016/j.solmat.2020.110795

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