Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3N4 interfaces

Johnson, B. C.; Rahman, H. U.; Gauja, E.; Ramer, R.; McCallum, J. C.

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Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3N4 interfaces

Date

2010

Authors

Abstract

The properties of traps at SiO2/Si and Si3N4/Si interfaces were examined and compared using deep level transient spectroscopy (DLTS). Small pulse DLTS was used to determine the effective electron capture cross-section of the interface states. Similar trends are found for both systems with the capture cross-section decreasing rapidly towards the band edge. The effective capture cross-section and energy level is also given for the SiSi3 defect at the Si3N4/Si interface.