Radiation-induced segregation of metals at moving SiO 2-amorphous Si interfaces

Abstract

Secondary ion mass spectrometry and Rutherford backscattering/channeling analysis have been used to study the segregation of Au at moving Si-SiO 2 interfaces during bombardment of Si with 15 keV O - ions. Essentially 100% of the Au is found to segregate at a bombardment temperature of 250 °C, whereas only partial segregation occurs for room temperature bombardment. Up to 10 monolayers of Au can be segregated in disordered Si behind an SiO 2 layer at 250 °C. These results are discussed in terms of ion-assisted migration of Au in disordered Si and extremely low solubilities of Au in SiO 2. Show more