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Proton irradiation of n-type GaAs

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Date

1999

Authors

Goodman, S
Auret, Francois D
Ridgway, Mark C
Myburg, G

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.

Description

Keywords

Keywords: Crystal defects; Deep level transient spectroscopy; Epitaxial growth; Proton irradiation; Semiconducting silicon; Semiconductor doping; Semiconductor growth; Defect clusters; Semiconducting gallium arsenide Deep level transient spectroscopy; Defects; GaAs; Proton irradiation

Citation

URI

http://hdl.handle.net/1885/93688

Collections

Open Access Research

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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01_Goodman_Proton_irradiation_of_n-type_1999.pdf (112.89 KB)

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