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Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory

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Date

2012

Authors

Wang, Guoxiang
Nie, Qiuhua
Shen, Xiang
Wang, Rongping
Wu, Liangcai
Lv, Yegang
Fu, Jing
Xu, Tiefeng
Dai, Shixun

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/71031

Collections

Open Access Research

Source

Materials Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.matlet.2012.08.003

Restricted until

2037-12-31

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01_Wang_Advantages_of_Zn_1.25_Sb_2_Te__2012.pdf (434.42 KB)

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