Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

Zhang, Xinyu; Cuevas, Andres

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Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

Date

2013

Authors

Zhang, Xinyu

Cuevas, Andres

Publisher

Wiley-VCH Verlag GMBH

Abstract

The intentional addition of hydrogen during reactive sputtering of AlOx films has led to a dramatic improvement of the surface passivation of crystalline silicon wafers achieved with this technique. The 5 ms effective minority carrier lifetime measured on

URI

http://hdl.handle.net/1885/74799

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Open Access Research

Source

Physica Status Solidi: Rapid Research Letters

Type

Journal article

DOI

10.1002/pssr.201308027

Restricted until

2037-12-31

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Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

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