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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

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Date

2003-06-02

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Abstract

Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×1015 cm-2 when annealed at 500°C.

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https://dspace-test.anu.edu.au/handle/1885/733722280

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DevOps Pure Testing

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Applied Physics Letters

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Article

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DOI

10.1063/1.1579565

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