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Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO 3 heterostructure

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Date

2013-03-11

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Abstract

We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 105 by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface.

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https://dspace-test.anu.edu.au/handle/1885/733747905

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DevOps Pure Testing

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Applied Physics Letters

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Article

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DOI

10.1063/1.4795145

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