Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications

Abstract

In this work, various nano-scale Pr0.7Ca0.3MnO3(PCMO)-based memory devices with electrode diameters of 250 nm were fabricated, and the effect of the metal electrode/PCMO interface on resistive switching (RS) for PCMO-based resistive random access memories, is systematically investigated. The switching behavior could be improved not only by using a reactive metal (W and Al) but also by inserting a thin oxide tunnel barrier layer (yttria-stabilized zirconia, i.e., YSZ) or a dielectric Al2O3 layer between the electrode and the PCMO film. Show more