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Improved performance of GaAs-based terahertz emitters

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Date

Authors

Headley, Carl
Fu, Lan
Parkinson, Patrick
Xu, Xinlong L
Lloyd-Hughes, J
Jagadish, Chennupati
Johnston, Michael B

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Publisher

IEEE

Abstract

We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

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Source

IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

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Restricted until

2037-12-31