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Development of a vertical wrap-gated InAs FET

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Date

2008

Authors

Thelander, Claes
Rehnstedt, Carl
Fröberg, Linus E
Lind, Erik
Martensson, Thomas
Caroff, Philippe
Lowgren, Truls
Ohlsson, B. Jonas
Samuelson, Lars
Wernersson, Lars-Erik

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, in sit

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/82436

Collections

Open Access Research

Source

IEEE Transactions on Electron Devices

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/TED.2008.2005151

Restricted until

2037-12-31

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Description
01_Thelander_Development_of_a_vertical_2008.pdf (729.93 KB)

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