Test environment running 7.6.6

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Room-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition

Thumbnail Image

Date

2005

Authors

Gao, Q
Buda, M
Tan, Hoe Hark
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.

Description

Keywords

semiconductor lasers

Citation

URI

http://hdl.handle.net/1885/43095
 http://digitalcollections.anu.edu.au/handle/1885/43095

Collections

Open Access Research

Source

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

Downloads

File
Description
ESL-QD_laser-Gao-000G57[1].pdf (358.36 KB)
3338-01.2006-01-16T22:29:17Z.xsh (371 B)

DSpace software copyright © 2002-2026 LYRASIS