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Hydrogen reintroduction by forming gas annealing to LPCVD silicon nitride coated structures

Date

Authors

Jin, Hao

Weber, Klaus

Deenapanray, Prakash

Blakers, Andrew

Publisher

Electrochemical Society Inc

Abstract

The effect of high-temperature anneals on low-pressure chemical-vapor deposited (LPCVD) Si3 N4 /thermally grown SiO2 stacks on silicon wafers has been studied. Annealing in a nitrogen atmosphere at 900 or 1000°C for 30 min causes a substantial reduction

Keywords

Keywords: Annealing; Chemical vapor deposition; Coatings; Electrochemistry; Hydrogen bonds; Optical properties; Passivation; Silicon wafers; Thermal effects; Gas annealing; Low-pressure chemical-vapor deposited (LPCVD); Nitride film; Surface passivation; Silicon ni

URI

http://hdl.handle.net/1885/27295

Collections

Open Access Research

Source

Journal of the Electrochemical Society

Type

Journal article

DOI

10.1149/1.2207058

Restricted until

2037-12-31

Downloads

File

Description

01_Jin_Hydrogen_reintroduction_by_2006.pdf (137.33 KB)