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EXAFS Characterisation of Ge Nanocrystals in Silica

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Ridgway, Mark C
Azevedo, G de M
Glover, Christopher
Elliman, Robert
Llewellyn, David
Cheung, Allen
Johannessen, Bernt
Brett, David Alisdair
Foran, Garry J

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Elsevier

Abstract

The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal annealing were studied with transmission electron microscopy, Raman spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. We compare results derived from these complementary techniques, focusing on the use of EXAFS to study the short-range order about Ge atoms. Utilizing this synchrotron-radiation-based analytical method, we show the nanocrystal inter-atomic distance distribution deviates from that of bulk Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second and third nearest-neighbour shells. The extent of disorder in the nanocrystalline sample is comparable to that of relaxed amorphous material.

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Nuclear Instruments and Methods in Physics Research: Section B

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