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Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

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Date

2011

Authors

Johnson, Brett
Haberl, Bianca
Bradby, Jodie
McCallum, Jeffrey C
Williams, James

Journal Title

Journal ISSN

Volume Title

Publisher

American Physical Society

Abstract

A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/70479

Collections

Open Access Research

Source

Physical Review B: Condensed Matter and Materials

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1103/PhysRevB.83.235205

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