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Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

Date

Authors

Barik, Satyanarayan

Tan, Hoe Hark

Jagadish, Chennupati

Publisher

Institute of Physics Publishing

Abstract

We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300°C, the QDs are rapid thermally annealed at 850°C for 30 s. Proton implantation induces less energy shift t

Keywords

Keywords: Annealing; High temperature effects; Indium arsenide; Indium phosphide; Ion implantation; Protons; Annihilation; Atomic displacement; Energy shift; Semiconductor quantum dots; ion; phosphorus; proton; quantum dot; article; concentration (parameters); ener

URI

http://hdl.handle.net/1885/18199

Collections

Open Access Research

Source

Nanotechnology

Type

Journal article

DOI

10.1088/0957-4484/18/17/175305

Restricted until

2037-12-31

Downloads

File

Description

01_Barik_Comparison_of_proton_and_2007.pdf (351.16 KB)