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High efficiency UMG silicon solar cells

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Date

2016-05-01

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Abstract

Hih efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8%. This is the highest efficiency reported for a cell based on 100% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron-oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device.

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Keywords

boron-oxygen, compensation, mobility, silicon, solar cell, upgraded metallurgical grade

Citation

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https://dspace-test.anu.edu.au/handle/1885/733749319

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DevOps Pure Testing

Source

Progress in Photovoltaics: Research and Applications

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Article

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DOI

10.1002/pip.2729

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