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Strong photosensitivity in tin-doped silica films

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Date

2000

Authors

Gaff, K
Mariman, Elaine
Dall (previously Weijers), Tessica
Love, John
Boswell, Roderick

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.

Description

Keywords

Keywords: Evaporation; Excimer lasers; Low temperature operations; Optical fibers; Photosensitivity; Refractive index; Semiconductor doping; Silica; Systematic errors; Tin; Ultraviolet radiation; Helicon activated reactive evaporation; Negative index refractive; Ti

Citation

URI

http://hdl.handle.net/1885/90261

Collections

Open Access Research

Source

Electronics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1049/el:20000574

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