Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy
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Authors
Ye, J. D.
Pannirselvam, S.
Lim, S. T.
Bi, J. F.
Sun, X. W.
Lo, G. Q.
Teo, K. L.
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American Institute of Physics
Abstract
We report the formation of two-dimensional electron gas 2DEG at the Zn1−xMgxO/ZnO interface
grown by metal-organic vapor phase epitaxy on sapphire substrates. The existence of the 2DEG
is confirmed by the observation of Shubnikov–de Haas oscillations and the integer quantum
Hall effect. In particular, the Zn0.8Mg0.2O/ZnO heterostructure shows a high Hall mobility of
2138 cm2 /V s with a carrier sheet density of 3.511012 cm−2 at 1.4 K. We attribute the origin of
2DEG to be the donor states on ZnMgO surface. The dependence of carrier sheet density of 2DEG
on ZnMgO layer thickness and Mg composition x are also investigated.
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Applied Physics Letters
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