Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers
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Gao, Q.
Tan, H. H.
Jagadish, C.
Sun, B. Q.
Gal, M.
Ouyang, L.
Zou, J.
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American Institute of Physics
Abstract
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties.
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Applied Physics Letters
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